In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈10 14 cm −2) on the Ge xSe 100− x ( x = 30, 33, 40) thin films and phase change devices is studied. Materials selection, device structure, and performance of prototype sensors are analyzed. Herein, the concept of employing Ge xSe 100− x glasses to monitor high temperature (450–528 ☌) using the phase change effect, is reported. The Ge–Se binary chalcogenide glass system with its wide glass-forming region is a potential candidate for high-temperature and high-radiation phase change applications. Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature.
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